Effect of ultrasonic loading on current in Mo/n-n+-Si with Schottky barriers

The results obtained in experimental studies of the operation of silicon Schottky diodes subjected to ultrasonic loading (oscillations frequency of 9.6 MHz; intensity of longitudinal waves as high as 0.7 W/cm 2 ) are reported. A reversible acoustically induced decrease in the Schottky barrier height...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-07, Vol.47 (7), p.987-992
Main Author: Olikh, O. Ya
Format: Article
Language:English
Subjects:
DEFECTS
ELECTRONS
INTERFACES
IONIZATION
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MHZ RANGE 01-100
OSCILLATIONS
Physics
Physics and Astronomy
Physics of Semiconductor Devices
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SILICON
TUNNEL EFFECT
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Summary:The results obtained in experimental studies of the operation of silicon Schottky diodes subjected to ultrasonic loading (oscillations frequency of 9.6 MHz; intensity of longitudinal waves as high as 0.7 W/cm 2 ) are reported. A reversible acoustically induced decrease in the Schottky barrier height (to 0.13 V) and an increase in the saturation and reverse current (by as much as 60%) are observed. It is shown that ultrasound does not affect the ideality factor of the diodes and the tunneling component of the reverse current. The process of electron transport is considered within the context of the model of an inhomogeneous Schottky barrier; it is shown that the observed effects can be related to the acoustically induced ionization of defects, which are located at the metal-semiconductor interface.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261307018X