Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons

The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence ΦP up to 3.75 × 1012 cm−2 or, equiva...

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Bibliographic Details
Published in:Applied physics letters 2012-12, Vol.101 (25)
Main Authors: Cowan, V. M., Morath, C. P., Hubbs, J. E., Myers, S., Plis, E., Krishna, S.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
CURRENT DENSITY
Detectors
Equivalence
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
Infrared
LAYERS
MATERIALS SCIENCE
MEV RANGE 10-100
Proton damage
Proton irradiation
PROTONS
QUANTUM EFFICIENCY
Radiation tolerance
RADIOSENSITIVITY
SEMICONDUCTOR MATERIALS
SUPERLATTICES
TEMPERATURE DEPENDENCE
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Summary:The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence ΦP up to 3.75 × 1012 cm−2 or, equivalently, a total ionizing dose = 500 kRad (Si). At this ΦP, an ∼31% drop in quantum efficiency η, ∼2 order increase in dark current density JD, and consequently, >1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for η and D*. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4772543