Faster radial strain relaxation in InAs-GaAs core-shell heterowires

The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocati...

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Published in:Journal of applied physics 2012-02, Vol.111 (4), p.044301-044301-9
Main Authors: Kavanagh, Karen L., Saveliev, Igor, Blumin, Marina, Swadener, Greg, Ruda, Harry E.
Format: Article
Language:English
Subjects:
CUBIC LATTICES
DISLOCATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
RELAXATION
SEMICONDUCTOR MATERIALS
SHEAR
STRAINS
STRESSES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
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cited_by cdi_FETCH-LOGICAL-c347t-8527319c99195014ab68e1bcbd6efa26d8477dcfb4947d4df244c5090574ff523
cites cdi_FETCH-LOGICAL-c347t-8527319c99195014ab68e1bcbd6efa26d8477dcfb4947d4df244c5090574ff523
container_end_page 044301-9
container_issue 4
container_start_page 044301
container_title Journal of applied physics
container_volume 111
creator Kavanagh, Karen L.
Saveliev, Igor
Blumin, Marina
Swadener, Greg
Ruda, Harry E.
description The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.
doi_str_mv 10.1063/1.3684964
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fullrecord <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22038866</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-8527319c99195014ab68e1bcbd6efa26d8477dcfb4947d4df244c5090574ff523</originalsourceid><addsrcrecordid>eNp1kM1KxDAYRYMoOI4ufIOCKxcZ8_-zEUpxxoEBN7oOaZrQSG0lCahvb8fO1tXlg_NduAeAW4w2GAn6gDdUKKYFOwMrjJSGknN0DlYIEQyVlvoSXOX8jhDGiuoVaLY2F5-qZLtohyqXZONYJT_Yb1viNFbztR_rDHe2zpWbkoe598NQ9X5-m75i8vkaXAQ7ZH9zyjV42z69Ns_w8LLbN_UBOspkgYoTSbF2WmPNEWa2Fcrj1rWd8MES0SkmZedCyzSTHesCYcxxpBGXLARO6BrcLb1TLtFkF4t3vZvG0btiCEFUKSFm6n6hXJpyTj6YzxQ_bPoxGJmjI4PNydHMPi7ssexv7__wIsososwiiv4C-QttPg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Faster radial strain relaxation in InAs-GaAs core-shell heterowires</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Kavanagh, Karen L. ; Saveliev, Igor ; Blumin, Marina ; Swadener, Greg ; Ruda, Harry E.</creator><creatorcontrib>Kavanagh, Karen L. ; Saveliev, Igor ; Blumin, Marina ; Swadener, Greg ; Ruda, Harry E.</creatorcontrib><description>The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3684964</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CUBIC LATTICES ; DISLOCATIONS ; GALLIUM ARSENIDES ; INDIUM ARSENIDES ; INTERFACES ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; QUANTUM WIRES ; RELAXATION ; SEMICONDUCTOR MATERIALS ; SHEAR ; STRAINS ; STRESSES ; SUBSTRATES ; TRANSMISSION ELECTRON MICROSCOPY</subject><ispartof>Journal of applied physics, 2012-02, Vol.111 (4), p.044301-044301-9</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-8527319c99195014ab68e1bcbd6efa26d8477dcfb4947d4df244c5090574ff523</citedby><cites>FETCH-LOGICAL-c347t-8527319c99195014ab68e1bcbd6efa26d8477dcfb4947d4df244c5090574ff523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,786,790,891,27957,27958</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22038866$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kavanagh, Karen L.</creatorcontrib><creatorcontrib>Saveliev, Igor</creatorcontrib><creatorcontrib>Blumin, Marina</creatorcontrib><creatorcontrib>Swadener, Greg</creatorcontrib><creatorcontrib>Ruda, Harry E.</creatorcontrib><title>Faster radial strain relaxation in InAs-GaAs core-shell heterowires</title><title>Journal of applied physics</title><description>The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.</description><subject>CUBIC LATTICES</subject><subject>DISLOCATIONS</subject><subject>GALLIUM ARSENIDES</subject><subject>INDIUM ARSENIDES</subject><subject>INTERFACES</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>QUANTUM WIRES</subject><subject>RELAXATION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SHEAR</subject><subject>STRAINS</subject><subject>STRESSES</subject><subject>SUBSTRATES</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KxDAYRYMoOI4ufIOCKxcZ8_-zEUpxxoEBN7oOaZrQSG0lCahvb8fO1tXlg_NduAeAW4w2GAn6gDdUKKYFOwMrjJSGknN0DlYIEQyVlvoSXOX8jhDGiuoVaLY2F5-qZLtohyqXZONYJT_Yb1viNFbztR_rDHe2zpWbkoe598NQ9X5-m75i8vkaXAQ7ZH9zyjV42z69Ns_w8LLbN_UBOspkgYoTSbF2WmPNEWa2Fcrj1rWd8MES0SkmZedCyzSTHesCYcxxpBGXLARO6BrcLb1TLtFkF4t3vZvG0btiCEFUKSFm6n6hXJpyTj6YzxQ_bPoxGJmjI4PNydHMPi7ssexv7__wIsososwiiv4C-QttPg</recordid><startdate>20120215</startdate><enddate>20120215</enddate><creator>Kavanagh, Karen L.</creator><creator>Saveliev, Igor</creator><creator>Blumin, Marina</creator><creator>Swadener, Greg</creator><creator>Ruda, Harry E.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20120215</creationdate><title>Faster radial strain relaxation in InAs-GaAs core-shell heterowires</title><author>Kavanagh, Karen L. ; Saveliev, Igor ; Blumin, Marina ; Swadener, Greg ; Ruda, Harry E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-8527319c99195014ab68e1bcbd6efa26d8477dcfb4947d4df244c5090574ff523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>CUBIC LATTICES</topic><topic>DISLOCATIONS</topic><topic>GALLIUM ARSENIDES</topic><topic>INDIUM ARSENIDES</topic><topic>INTERFACES</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>QUANTUM WIRES</topic><topic>RELAXATION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SHEAR</topic><topic>STRAINS</topic><topic>STRESSES</topic><topic>SUBSTRATES</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kavanagh, Karen L.</creatorcontrib><creatorcontrib>Saveliev, Igor</creatorcontrib><creatorcontrib>Blumin, Marina</creatorcontrib><creatorcontrib>Swadener, Greg</creatorcontrib><creatorcontrib>Ruda, Harry E.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kavanagh, Karen L.</au><au>Saveliev, Igor</au><au>Blumin, Marina</au><au>Swadener, Greg</au><au>Ruda, Harry E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Faster radial strain relaxation in InAs-GaAs core-shell heterowires</atitle><jtitle>Journal of applied physics</jtitle><date>2012-02-15</date><risdate>2012</risdate><volume>111</volume><issue>4</issue><spage>044301</spage><epage>044301-9</epage><pages>044301-044301-9</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3684964</doi><oa>free_for_read</oa></addata></record>
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subjects CUBIC LATTICES
DISLOCATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
RELAXATION
SEMICONDUCTOR MATERIALS
SHEAR
STRAINS
STRESSES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
title Faster radial strain relaxation in InAs-GaAs core-shell heterowires
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-23T05%3A16%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Faster%20radial%20strain%20relaxation%20in%20InAs-GaAs%20core-shell%20heterowires&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Kavanagh,%20Karen%20L.&rft.date=2012-02-15&rft.volume=111&rft.issue=4&rft.spage=044301&rft.epage=044301-9&rft.pages=044301-044301-9&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3684964&rft_dat=%3Cscitation_osti_%3Ejap%3C/scitation_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c347t-8527319c99195014ab68e1bcbd6efa26d8477dcfb4947d4df244c5090574ff523%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true