Faster radial strain relaxation in InAs-GaAs core-shell heterowires

The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocati...

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Bibliographic Details
Published in:Journal of applied physics 2012-02, Vol.111 (4), p.044301-044301-9
Main Authors: Kavanagh, Karen L., Saveliev, Igor, Blumin, Marina, Swadener, Greg, Ruda, Harry E.
Format: Article
Language:English
Subjects:
CUBIC LATTICES
DISLOCATIONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
RELAXATION
SEMICONDUCTOR MATERIALS
SHEAR
STRAINS
STRESSES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
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Summary:The structure of wurtzite and zinc blende InAs-GaAs (001) core-shell nanowires grown by molecular beam epitaxy on GaAs (001) substrates has been investigated by transmission electron microscopy. Heterowires with InAs core radii exceeding 11 nm, strain relax through the generation of misfit dislocations, given a GaAs shell thickness greater than 2.5 nm. Strain relaxation is larger in radial directions than axial, particularly for shell thicknesses greater than 5.0 nm, consistent with molecular statics calculations that predict a large shear stress concentration at each interface corner.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3684964