Frequency and temperature dependences of capacitance-voltage characteristics of InGaN/GaN light-emitting structures with multiple quantum wells

A frequency dependence of capacitance-voltage ( C–V ) characteristics in multiple quantum well InGaN/GaN heterostructures in the range of 60 Hz-5 MHz is investigated at temperatures from 77 to 300 K. It is found that temperature lowering and test frequency increase lead to the similar changes in obt...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-02, Vol.45 (2), p.221-224
Main Authors: Soltanovich, O. A., Shmidt, N. M., Yakimov, E. B.
Format: Article
Language:English
Subjects:
APPROXIMATIONS
CAPACITANCE
Criminal investigation
DISTRIBUTION
FREQUENCY DEPENDENCE
GALLIUM NITRIDES
Light-emitting diodes
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
Quantum Phenomena
QUANTUM WELLS
Semiconductor Structures
TEMPERATURE DEPENDENCE
Toy industry
TUNNEL EFFECT
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Summary:A frequency dependence of capacitance-voltage ( C–V ) characteristics in multiple quantum well InGaN/GaN heterostructures in the range of 60 Hz-5 MHz is investigated at temperatures from 77 to 300 K. It is found that temperature lowering and test frequency increase lead to the similar changes in obtained apparent carrier distributions. It is shown that commonly used conditions for capacitance-voltage profiling of InGaN/GaN LEDs correspond to an intermediate case between low- and high-frequency capacitance approximations. At all temperatures investigated, the edge low-frequency capacitance-voltage profiles are experimentally reached and found to be identical. The process of attainment of equilibrium of the charges in the active region is most likely determined by tunneling of the carriers through the barriers.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611020205