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Impact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structures
The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time-resolved photoluminescence and micro-photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the...
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| creator | Syperek, M. Musial, A. Seek, G. Podemski, P. Misiewicz, J. Loeffler, A. Hoefling, S. Worschech, L. Forchel, A. |
| description | The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time-resolved photoluminescence and micro-photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the wetting layer revealing also short radiative lifetime of excitons in the dashes as a consequence of a weak carrier confinement. The peculiar properties of the system can be responsible for the observation of pronounced biexciton sideband, which can be related to QDash biexciton interaction with excitons confined in the wetting layer potential fluctuations. |
| doi_str_mv | 10.1063/1.3666504 |
| format | conference_proceeding |
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There has been proven a multistage relaxation process with a key role of the exciton localization within the wetting layer revealing also short radiative lifetime of excitons in the dashes as a consequence of a weak carrier confinement. The peculiar properties of the system can be responsible for the observation of pronounced biexciton sideband, which can be related to QDash biexciton interaction with excitons confined in the wetting layer potential fluctuations.</abstract><cop>United States</cop><doi>10.1063/1.3666504</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2011, Vol.1399 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21612420 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | ARSENIC COMPOUNDS ARSENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CONFINEMENT CRYSTAL GROWTH CRYSTAL GROWTH METHODS EMISSION EPITAXY EXCITONS FLUCTUATIONS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM ARSENIDES INDIUM COMPOUNDS LAYERS LIFETIME LUMINESCENCE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES PHOTOLUMINESCENCE PHOTON EMISSION PNICTIDES POTENTIALS QUANTUM DOTS QUASI PARTICLES RELAXATION RESOLUTION STRAINS TIME RESOLUTION TIMING PROPERTIES VARIATIONS |
| title | Impact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structures |
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