Impact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structures

The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time-resolved photoluminescence and micro-photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the...

Full description

Saved in:
Bibliographic Details
Main Authors: Syperek, M., Musial, A., Seek, G., Podemski, P., Misiewicz, J., Loeffler, A., Hoefling, S., Worschech, L., Forchel, A.
Format: Conference Proceeding
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONFINEMENT
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
EMISSION
EPITAXY
EXCITONS
FLUCTUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
LIFETIME
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
POTENTIALS
QUANTUM DOTS
QUASI PARTICLES
RELAXATION
RESOLUTION
STRAINS
TIME RESOLUTION
TIMING PROPERTIES
VARIATIONS
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time-resolved photoluminescence and micro-photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the wetting layer revealing also short radiative lifetime of excitons in the dashes as a consequence of a weak carrier confinement. The peculiar properties of the system can be responsible for the observation of pronounced biexciton sideband, which can be related to QDash biexciton interaction with excitons confined in the wetting layer potential fluctuations.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3666504