Effect of low-temperature annealing on photoluminescence of silicon nanocluster structures

Experimental data on the photoluminescence spectra of Si nanocluster structures obtained after high-temperature annealing (1150°C) of SiO x films deposited onto Si and subsequent low-temperature annealing of the films at the temperature 450°C in different ambient are reported. It is shown that the p...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-04, Vol.44 (4), p.514-518
Main Authors: Romanyuk, B. N., Melnik, V. P., Popov, V. G., Khatsevich, I. M., Oberemok, A. S.
Format: Article
Language:English
Subjects:
ANNEALING
ATOMS
CHALCOGENIDES
CHARGE CARRIERS
DATA
DISPERSIONS
ELEMENTS
EMISSION
ENERGY LEVELS
EXPERIMENTAL DATA
Fabrication
HEAT TREATMENTS
INFORMATION
INTERFACES
LUMINESCENCE
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MINERALS
MIXTURES
NANOSTRUCTURES
Nanotechnology
NITROGEN
NONMETALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PEAKS
PHOTOLUMINESCENCE
PHOTON EMISSION
Physics
Physics and Astronomy
RECOMBINATION
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0400-1000 K
Testing of Materials and Structures
Treatment
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Summary:Experimental data on the photoluminescence spectra of Si nanocluster structures obtained after high-temperature annealing (1150°C) of SiO x films deposited onto Si and subsequent low-temperature annealing of the films at the temperature 450°C in different ambient are reported. It is shown that the photoluminescence intensity substantially increases after low-temperature annealing and the most-pronounced effect is observed after annealing in the oxygen-nitrogen mixture. In this case, the photoluminescence spectrum is shifted to longer wavelengths and shaped as a broad band with a peak around 800 nm. The processes responsible for the increase in the PL intensity on low-temperature annealing in the oxygen-nitrogen mixture are defined by reconstruction of the Si/SiO 2 interfaces and by energy levels formed at the interfaces and involved in recombination of nonequilibrium charge carriers. The quasichemical reactions that bring about the formation of such levels involve oxygen and nitrogen atoms, and the centers, at which the reactions are initiated, are unsaturated valence bonds at the interfaces between Si nanoclusters and the SiO 2 matrix.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610040184