Temperature delocalization of charge carriers in semiconductor lasers

The temperature dependences of emission characteristics are investigated for laser diodes based on asymmetric separate-confinement heterostructures with a broadened waveguide. It is established that an increase in the charge-carrier concentration in the waveguide layer is the basic mechanism of satu...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-05, Vol.44 (5), p.661-666
Main Authors: Slipchenko, S. O., Shashkin, I. S., Vavilova, L. S., Vinokurov, D. A., Lyutetskiy, A. V., Pikhtin, N. A., Podoskin, A. A., Stankevich, A. L., Fetisova, N. V., Tarasov, I. S.
Format: Article
Language:English
Subjects:
ASYMMETRY
AUGMENTATION
CHARGE CARRIERS
CONFINEMENT
CURRENTS
DIMENSIONS
EFFICIENCY
ELECTRIC CURRENTS
EMISSION
Emissions (Pollution)
LASERS
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NANOSTRUCTURES
Physics
Physics and Astronomy
Physics of Semiconductor Devices
QUANTUM EFFICIENCY
QUANTUM WELLS
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SENSITIVITY
SOLID STATE LASERS
TEMPERATURE DEPENDENCE
TEMPERATURE DISTRIBUTION
THICKNESS
THRESHOLD CURRENT
WAVEGUIDES
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Summary:The temperature dependences of emission characteristics are investigated for laser diodes based on asymmetric separate-confinement heterostructures with a broadened waveguide. It is established that an increase in the charge-carrier concentration in the waveguide layer is the basic mechanism of saturation in the light-current characteristic with increasing temperature in the CW mode. It is experimentally shown that the temperature delocalization of charge carriers leads to increasing internal optical losses and decreasing external differential quantum efficiency. It is shown that the degree of delocalization of charge carriers depends on the charge-carrier temperature distribution, the threshold concentration, and the quantum-well depth. The effect of thickness and energy depth of the quantum well on the temperature sensitivity of the threshold current and output optical power is considered.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610050209