Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or aft...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-04, Vol.98 (14), p.141104-141104-3
Main Authors: Malinowski, Pawel E., Duboz, Jean-Yves, De Moor, Piet, Minoglou, Kyriaki, John, Joachim, Horcajo, Sara Martin, Semond, Fabrice, Frayssinet, Eric, Verhoeve, Peter, Esposito, Marco, Giordanengo, Boris, BenMoussa, Ali, Mertens, Robert, Van Hoof, Chris
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH METHODS
DETECTION
DOPED MATERIALS
ELECTRODES
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
EPITAXY
EXTREME ULTRAVIOLET RADIATION
FLUIDS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
GASES
HELIUM
LAYERS
MATERIALS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHOTODIODES
PNICTIDES
RADIATIONS
RARE GASES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SENSITIVITY
SILICON
ULTRAVIOLET RADIATION
WAVELENGTHS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3576914