Low gap amorphous GaN{sub 1-x}As{sub x} alloys grown on glass substrate

Amorphous GaN{sub 1-x}As{sub x} layers with As content in the range of x=0.1 to 0.6 were grown by molecular beam epitaxy on Pyrex glass substrate. These alloys exhibit a wide range of band gap values from 2.2 to 1.3 eV. We found that the density of the amorphous films is {approx}0.8-0.85 of their co...

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Bibliographic Details

Published in:	Applied physics letters 2010-09, Vol.97 (10)
Main Authors:	Yu, K. M., Liliental-Weber, Z., Kao, V. M., Walukiewicz, W., Novikov, S. V., Foxon, C. T., Broesler, R., Levander, A. X., Dubon, O. D., Wu, J., Department of Materials Science and Engineering, University of California, Berkeley, California 94720
Format:	Article
Language:	eng
Subjects:	ABSORPTION AMORPHOUS STATE ARSENIC COMPOUNDS ARSENIDES BOROSILICATE GLASS CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH CRYSTAL GROWTH METHODS CRYSTALS DIMENSIONLESS NUMBERS ENERGY GAP ENERGY RANGE EPITAXY EV RANGE GALLIUM ARSENIDES GALLIUM COMPOUNDS GALLIUM NITRIDES GLASS LAYERS MATERIALS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MORPHOLOGY NITRIDES NITROGEN COMPOUNDS PHOTOELECTRIC EFFECT PHOTOVOLTAIC EFFECT PNICTIDES PYREX SEMICONDUCTOR MATERIALS SORPTION SUBSTRATES THIN FILMS
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