Loading…
Different growth rates for catalyst-induced and self-induced GaN nanowires
The catalyst- and self-induced pathways of GaN nanowire growth by molecular beam epitaxy are compared. The catalyst-induced nanowires elongate faster than the self-induced ones and their growth rate is fully determined by the impinging N rate. The self-induced nanowire growth rate is identical on bo...
Saved in:
Published in: | Applied physics letters 2010-10, Vol.97 (15), p.153105-153105-3 |
---|---|
Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The catalyst- and self-induced pathways of GaN nanowire growth by molecular beam epitaxy are compared. The catalyst-induced nanowires elongate faster than the self-induced ones and their growth rate is fully determined by the impinging N rate. The self-induced nanowire growth rate is identical on both Si(111) and Si(001) and approaches the impinging N rate only for the few longest nanowires. This difference is attributed to the presence of the Ni-catalyst which enhances the incorporation of Ga at the nanowire tip while for the self-induced nanowires, growth is limited by the different incorporation rates on the nanowire tip and sidewall facets. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3488010 |