rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulator-metal (MIM) diode, completed by depositing gold (Au) on top of the oxide. The...

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Bibliographic Details
Published in:Applied physics letters 2010-10, Vol.97 (15), p.153104-153104-3
Main Authors: Hoey, Megan L., Carlson, J. B., Osgood, R. M., Kimball, B., Buchwald, W.
Format: Article
Language:English
Subjects:
CHALCOGENIDES
CHEMICAL REACTIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
GOLD
LAYERS
MATERIALS SCIENCE
METALS
MICROSCOPY
NICKEL
NICKEL COMPOUNDS
NICKEL OXIDES
NONMETALS
OXIDATION
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
SEMIMETALS
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulator-metal (MIM) diode, completed by depositing gold (Au) on top of the oxide. The electrical and structural properties of the NiO thin film were examined using resistivity calculations, current-voltage (I-V) measurements and cross-sectional transmission electron microscopy (XTEM) imaging. The flow rate of the oxygen gas, chamber pressure, power, and exposure time and their influence on the characteristics of the NiO thin film were studied.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3499661