Monolayer graphene growth on sputtered thin film platinum

It is demonstrated that sputtered thin film platinum (Pt) can be used as a catalytic metal for graphene growth on metal. During the crystallization annealing, the sputtered Pt is crystallized mostly into Pt (111) orientation, maintaining excellent surface roughness with no sign of agglomeration. The...

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Bibliographic Details
Published in:Journal of applied physics 2009-11, Vol.106 (10), p.104309-104309-6
Main Authors: Kang, Byung Jin, Mun, Jeong Hun, Hwang, Chan Yong, Cho, Byung Jin
Format: Article
Language:English
Subjects:
AGGLOMERATION
ALKANES
ANNEALING
CARBON
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTALLIZATION
DEPOSITION
ELEMENTS
ETCHING
HEAT TREATMENTS
HYDROCARBONS
MATERIALS SCIENCE
METALS
METHANE
MICROSCOPY
NONMETALS
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PLATINUM
PLATINUM METALS
RAMAN SPECTRA
ROUGHNESS
SCANNING TUNNELING MICROSCOPY
SEGREGATION
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOLUBILITY
SPECTRA
SPUTTERING
SUBSTRATES
SURFACE FINISHING
SURFACE PROPERTIES
THIN FILMS
TRANSITION ELEMENTS
TUNNEL EFFECT
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Summary:It is demonstrated that sputtered thin film platinum (Pt) can be used as a catalytic metal for graphene growth on metal. During the crystallization annealing, the sputtered Pt is crystallized mostly into Pt (111) orientation, maintaining excellent surface roughness with no sign of agglomeration. The relatively lower carbon solubility in Pt and the good surface roughness of the thin film Pt enable us to form a uniform monolayer graphene on Pt over the entire region of the thin film Pt / SiO 2 / Si substrate by carbon dissolution and segregation method processed in a methane ambient. The monolayer graphene grown on Pt has been successfully transferred to SiO 2 / Si substrate by simple wet etching of Pt. The results of Raman spectroscopic and scanning tunneling microscopic measurements of the synthesized graphene layer are presented.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3254193