Nickel-induced crystallization of amorphous Ge film for blue-ray recording under thermal annealing and pulsed laser irradiation

The crystallization kinetics of a -Ge thin film induced by a thin Ni layer under thermal annealing and pulsed laser irradiation has been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a -Ge in the a -Ge/Ni bilayer recording film were si...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2009-07, Vol.106 (2), p.023530-023530-5
Main Authors: Her, Yung-Chiun, Chen, Jyun-Hung, Tsai, Ming-Hsin, Tu, Wei-Ting
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
ANNEALING
CRYSTALLIZATION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
GERMANIUM
GRAIN GROWTH
HEAT TREATMENTS
LASER RADIATION
LAYERS
MATERIALS
MATERIALS SCIENCE
METALS
NICKEL
NUCLEATION
PHASE TRANSFORMATIONS
RADIATIONS
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSITION ELEMENTS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The crystallization kinetics of a -Ge thin film induced by a thin Ni layer under thermal annealing and pulsed laser irradiation has been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a -Ge in the a -Ge/Ni bilayer recording film were significantly reduced to 385 ° C and 2.4 eV, respectively, due to the fast Ge diffusion in the already formed germanide phases. The reaction exponent m of ∼ 1.7 for the a -Ge/Ni bilayer corresponds to a crystallization process in which grain growth occurs with nucleation and the nucleation rate decreases with the progress of the grain growth process. Under pulsed laser irradiation, the maximum data-transfer rates of 22, 56, 74, and 112 Mbits/s can be achieved in the write-once blue-ray disk at the recording powers of 3, 4, 5, and 6 mW, respectively.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3183956