Periodic supply of indium as surfactant for N-polar InN growth by plasma-assisted molecular-beam epitaxy

We have investigated the self-surfactant effect of In for N-polar InN growth by plasma-assisted molecular-beam epitaxy. We found that InN quality was significantly improved if a thin In coverage (about 1.8 ML) was introduced before InN growth. However, this In coverage was slowly consumed during sub...

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Bibliographic Details
Published in:Applied physics letters 2009-07, Vol.95 (4)
Main Authors: Yao, Yong-Zhao, Sekiguchi, Takashi, Ohgaki, Takeshi, Adachi, Yutaka, Ohashi, Naoki, Okuno, Hanako, Takeguchi, Masaki
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
INDIUM
INDIUM NITRIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PERIODICITY
SEMICONDUCTOR MATERIALS
SURFACTANTS
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Summary:We have investigated the self-surfactant effect of In for N-polar InN growth by plasma-assisted molecular-beam epitaxy. We found that InN quality was significantly improved if a thin In coverage (about 1.8 ML) was introduced before InN growth. However, this In coverage was slowly consumed during subsequent InN growth under N-rich condition. Periodically restoring In coverage for thick InN growth was proposed to solve this consumption problem. We suggest that the effect of In surfactant is to terminate the surface N dangling bonds and form an In adlayer, under which an efficient diffusion channel for lateral N adatom transport is created.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3189262