Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices Due to Radiations

6H-Silicon Carbide (SiC) diodes were fabricated and irradiated with Co-60 gamma-rays, 1 MeV electrons, and 65 MeV protons. After the radiation damage was introduced in devices, the Charge Collection Efficiency (CCE) was evaluated by using the Transient Ion Beam Induced Current (TIBIC) system. The ef...

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Bibliographic Details
Main Authors: Onoda, Shinobu, Iwamoto, Naoya, Hirao, Toshio, Kawano, Katsuyasu, Kojima, Kazuhisa, Ohshima, Takeshi
Format: Conference Proceeding
Language:English
Subjects:
CARRIER DENSITY
CHARGE COLLECTION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
ELECTRON BEAMS
ENERGY LOSSES
GAMMA RADIATION
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ION BEAMS
IRRADIATION
MEV RANGE
PHYSICAL RADIATION EFFECTS
PROTON BEAMS
SEMICONDUCTOR DIODES
SILICON CARBIDES
TRANSIENTS
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Summary:6H-Silicon Carbide (SiC) diodes were fabricated and irradiated with Co-60 gamma-rays, 1 MeV electrons, and 65 MeV protons. After the radiation damage was introduced in devices, the Charge Collection Efficiency (CCE) was evaluated by using the Transient Ion Beam Induced Current (TIBIC) system. The effective carrier density was also estimated from Capacitance-Voltage (C-V) characteristics. It was found that both the CCE and the effective carrier density decrease with increase in the fluence. We discuss whether Non-Ionizing Energy Loss (NIEL) analysis can estimate the degradation in these parameters. Results from this study suggest that the damage factors of these parameters in SiC can be scaled by the NIEL.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3119984