Special features of optical and photoelectric properties of nominally undoped and Cu-doped CdS single crystals

Experimental data on the effect of fast reactor neutrons on the absorption spectra, photoconductivity, and luminescence of nominally undoped and Cu-doped CdS single crystals are reported. It is shown that defect clusters formed as a result of neutron irradiation exhibit the properties of getters for...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-04, Vol.42 (4), p.389-393
Main Authors: Davidyuk, G. E., Bozhko, V. V., Mironchuk, G. L., Bulatetskaya, L. V., Kevshin, A. G.
Format: Article
Language:English
Subjects:
ABSORPTION SPECTRA
ANNEALING
CADMIUM SULFIDES
COPPER
CRYSTAL LATTICES
DOPED MATERIALS
Electronic and Optical Properties of Semiconductors
FAST REACTORS
IRRADIATION
LUMINESCENCE
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MONOCRYSTALS
NEUTRONS
PHOTOCONDUCTIVITY
Physics
Physics and Astronomy
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
VACANCIES
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Summary:Experimental data on the effect of fast reactor neutrons on the absorption spectra, photoconductivity, and luminescence of nominally undoped and Cu-doped CdS single crystals are reported. It is shown that defect clusters formed as a result of neutron irradiation exhibit the properties of getters for easily migrating optically active impurities in the crystal lattice. In neutron-irradiated samples, the defects can be annealed in two stages. The first stage (100–150°C) involves the annealing of point defects, while the second stage (250–420°C) involves mainly the annealing of defect clusters. The degradation of the defect clusters is accompanied with the enrichment of the lattice with Cd and S vacancies.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608040040