Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy

The unique property of Si (111) as effective pseudomask substrate for selective growth of GaN by ammonia-molecular-beam epitaxy is reported. The critical nucleation temperature of GaN on Si (111) surface is found to be as low as 700°C, much lower than that on sapphire or AlN surface. As a result, se...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (17)
Main Authors: Tang, H., Haffouz, S., Bardwell, J. A.
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
AMMONIA
CRYSTAL GROWTH
FABRICATION
GALLIUM NITRIDES
INDIUM NITRIDES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NUCLEATION
OPTIMIZATION
QUANTUM DOTS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
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Summary:The unique property of Si (111) as effective pseudomask substrate for selective growth of GaN by ammonia-molecular-beam epitaxy is reported. The critical nucleation temperature of GaN on Si (111) surface is found to be as low as 700°C, much lower than that on sapphire or AlN surface. As a result, selective growth of GaN is possible by ammonia-molecular-beam epitaxy on Si (111) substrates using a patterned AlN buffer layer. The wide range of growth temperatures (700–900°C) available for selective growth is a critical advantage for control and optimization of the facet characteristics of the selectively grown GaN patterns as required for potential fabrication of site-specific GaN or InGaN quantum dots. The demonstrated ease of selective growth of GaN on silicon has also implications in potential on-chip integration of GaN devices with silicon devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2199457