High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP ( 001 )

Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 ∘ off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misorient...

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Bibliographic Details
Published in:Applied physics letters 2006-03, Vol.88 (12), p.123104-123104-3
Main Authors: Wang, Yuan-li, Jin, P., Ye, X. L., Zhang, C. L., Shi, G. X., Li, R. Y., Chen, Y. H., Wang, Z. G.
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
BUFFERS
CRYSTAL GROWTH
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PERIODICITY
PHOTOLUMINESCENCE
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SUBSTRATES
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Summary:Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 ∘ off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm , respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP ( 001 ) as compared to that on normal InP ( 001 ) .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2188040