Room temperature oxidation kinetics of Si nanoparticles in air, determined by x-ray photoelectron spectroscopy

The air oxidation kinetics of low coverages of ∼ 5 nm Si nanoparticles, deposited by pulsed excimer laser ablation (KrF, 248 nm) in He, have been characterized by x-ray photoelectron spectroscopy. A simple model, based on the evolution of the Si 2 p spectral components during oxidation, has been dev...

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Bibliographic Details
Published in:Journal of applied physics 2005-01, Vol.97 (2), p.024303-024303-6
Main Authors: Yang, D.-Q., Gillet, Jean-Numa, Meunier, M., Sacher, E.
Format: Article
Language:English
Subjects:
ABLATION
AIR
EVOLUTION
KRYPTON FLUORIDE LASERS
MATERIALS SCIENCE
NANOSTRUCTURES
NONLINEAR PROBLEMS
OXIDATION
OXIDES
OXYGEN
PARTICLES
REACTION KINETICS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
TEMPERATURE RANGE 0273-0400 K
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:The air oxidation kinetics of low coverages of ∼ 5 nm Si nanoparticles, deposited by pulsed excimer laser ablation (KrF, 248 nm) in He, have been characterized by x-ray photoelectron spectroscopy. A simple model, based on the evolution of the Si 2 p spectral components during oxidation, has been developed to determine the nanoparticle oxide thickness. It is found that the short-term oxide thickness is greater, and the long-term room-temperature air oxidization rate of these nanoparticles is less, than those reported for bulk a -Si and c -Si. The results are also consistent with an earlier transmission electron microscope observation of the oxidation of larger Si particles at higher temperatures. The greater short-term oxide thickness may be attributed to surface defects on the prepared Si nanoparticles, and lower long-term oxidation rate is due to the nonlinear decrease of oxygen diffusion in spherical systems.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1835566