A Novel 19$\sqrt {19} $ × 19$\sqrt {19} $ Superstructure in Epitaxially Grown 1T‐TaTe 2

Abstract The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel × charge order in few‐layer‐thick 1T‐TaTe 2 transition metal dichalcogenide films grown by molecular beam epitaxy, which has...

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Published in:Advanced materials (Weinheim) 2022-09, Vol.34 (38)
Main Authors: Hwang, Jinwoong, Jin, Yeongrok, Zhang, Canxun, Zhu, Tiancong, Kim, Kyoo, Zhong, Yong, Lee, Ji‐Eun, Shen, Zongqi, Chen, Yi, Ruan, Wei, Ryu, Hyejin, Hwang, Choongyu, Lee, Jaekwang, Crommie, Michael F., Mo, Sung‐Kwan, Shen, Zhi‐Xun
Format: Article
Language:English
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Summary:Abstract The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel × charge order in few‐layer‐thick 1T‐TaTe 2 transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized, is report. The photoemission and scanning probe measurements demonstrate that monolayer 1T‐TaTe 2 exhibits a variety of metastable charge density wave orders, including the × superstructure, which can be selectively stabilized by controlling the post‐growth annealing temperature. Moreover, it is found that only the × order persists in 1T‐TaTe 2 films thicker than a monolayer, up to 8 layers. The findings identify the previously unrealized novel electronic order in a much‐studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202204579