Electron transfer from the barrier in InAs/GaAs quantum dot-well structure

We study single electron tunneling from the barrier in the binary InAs/GaAs quantum structure, including quantum well (QW) and quantum dot (QD). Tunneling is described in the terms of localized/delocalized states and their spectral distributions. Modeling is performed using the phenomenological effe...

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Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2019-10, Vol.114 (C), p.113629, Article 113629
Main Authors: Filikhin, I., Peterson, Th, Vlahovic, B., Kruchinin, S.P., Kuzmichev, Yu.B., Mitic, V.
Format: Article
Language:English
Subjects:
Quantum dots
Quantum wells
Single electron levels
Tunneling localization
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Summary:We study single electron tunneling from the barrier in the binary InAs/GaAs quantum structure, including quantum well (QW) and quantum dot (QD). Tunneling is described in the terms of localized/delocalized states and their spectral distributions. Modeling is performed using the phenomenological effective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented, focused on the effect of QD-QW geometry variations. The relation to the PL experiments is shown. •Tunneling is described in the terms of localized/delocalized states and their spectral distributions.•Two and three-dimensional modeling is performed for InAs/GaAs quantum well-dot complex.•Effects of QD-QW geometry variations are decribed.•The modeling covers the main phenomenons of the optical PL experiments.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2019.113629