GaN/InGaN Blue Light‐Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam‐Assisted Deposition

Light‐emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal‐organic chemical vapor deposition (MOCVD) GaN layers on non‐single‐crystal substrates. Epitaxial GaN is deposited directly on metal fo...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2020-04, Vol.217 (7), p.n/a
Main Authors: Tarief Elshafiey, Abdelrahman, DaVico, Kenneth M., Rishinaramangalam, Ashwin K., Rashidi, Arman, Aragon, Andrew, Feezell, Daniel, Gunning, Brendan P., Sheehan, Christopher, Matias, Vladimir
Format: Article
Language:English
Subjects:
Current voltage characteristics
Electric potential
Electroluminescence
Epitaxial growth
Gallium nitrides
GaN
III-nitrides
Indium gallium nitrides
InGaN
Ion beam assisted deposition
Ion beams
LEDs
Light emitting diodes
Metal foils
Metalorganic chemical vapor deposition
Organic chemicals
Organic chemistry
Polycrystals
Production costs
Quantum efficiency
Sapphire
Substrates
Voltage
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Summary:Light‐emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal‐organic chemical vapor deposition (MOCVD) GaN layers on non‐single‐crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam‐assisted deposition (IBAD) aligned layer. For a single 170 μm‐diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I–V) characteristics show a turn‐on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. InGaN LEDs on large‐area non‐single‐crystal substrates such as metal foils enable large‐area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays. Herein, LED arrays fabricated on polycrystalline molybdenum alloy metal substrates are demonstrated using a novel technique that enables the growth of epitaxial GaN layers on non‐single‐crystal substrates. InGaN LEDs prepared on metal samples show similar electrical and optical characteristics to LED structures grown on standard sapphire substrates but with 3× lower efficiency at present.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201900800