The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers

The model for intrinsic defects in Cu(In,Ga)Se2 semiconductor layers is still under debate for the full range between CuInSe2 and CuGaSe2. It is commonly agreed by theory and experiment, that there are at least one shallow donor and two shallow acceptors. Spatially resolved photoluminescence on CuGa...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2019-07, Vol.31 (42), p.425702-425702
Main Authors: Babbe, Finn, Elanzeery, Hossam, Wolter, Max H, Santhosh, Korra, Siebentritt, Susanne
Format: Article
Language:English
Subjects:
admittance
CIGS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Cu-rich
CuInSe
CuInSe2
defects
photoluminescence
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Summary:The model for intrinsic defects in Cu(In,Ga)Se2 semiconductor layers is still under debate for the full range between CuInSe2 and CuGaSe2. It is commonly agreed by theory and experiment, that there are at least one shallow donor and two shallow acceptors. Spatially resolved photoluminescence on CuGaSe2 previously revealed a third acceptor. In this study we show with the same method that the photoluminescence peak at 0.94 eV in CuInSe2, previously attributed to a third acceptor, is a phonon replica. However another pronounced peak at 0.9 eV is detected on polycrystalline CuInSe2 samples grown with high copper and selenium excess. Intensity and temperature dependent photoluminescence measurements reveal that this peak originates from a DA-transition from a shallow donor (
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/ab2e24