Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

Electronic properties of a CdTe solar cell are reported using temperature-dependent capacitance spectroscopy and current-voltage characteristics, the latter in dark and illuminated conditions. The baseline solar cell material stack investigated is comprised of soda-lime-glass/SnO2:F/SnO2/CdS:O-buffe...

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Bibliographic Details
Published in:Thin solid films 2019-09, Vol.685 (C), p.385-392
Main Authors: Paul, Sanjoy, Swartz, Craig, Sohal, Sandeep, Grice, Corey, Bista, Sandip Singh, Li, Deng-Bing, Yan, Yanfa, Holtz, Mark, Li, Jian V.
Format: Article
Language:English
Subjects:
Back surface etching
Buffer layers
Cadmium oxysulphide
Cadmium telluride solar cells
Charge carrier transport
Defects
Magnesium-doped zinc oxide
Recombination
SOLAR ENERGY
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Summary:Electronic properties of a CdTe solar cell are reported using temperature-dependent capacitance spectroscopy and current-voltage characteristics, the latter in dark and illuminated conditions. The baseline solar cell material stack investigated is comprised of soda-lime-glass/SnO2:F/SnO2/CdS:O-buffer/CdTe-absorber/Cu/Au. Device properties are compared with CdTe solar cells in which the back surface was hydroiodic acid etched, before the back-contact formation, and a CdTe device in which Mg-doped ZnO (MZO) replaces buffer layers. Reduced back-contact barrier height and grain boundary barrier height are observed in the hydroiodic acid treated CdTe cell. Improved device performance in the MZO-based CdTe device is attributed to reduced emitter/absorber interface recombination when using the MZO window layer. •Back-surface treatment using hydroiodic acid before CdTe back contact formation.•A high bandgap Mg-doped ZnO (MZO) layer replaces the conventional CdS buffer.•Characterizing reduction in contact barrier height and interface recombination.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2019.06.058