Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator

Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the botto...

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Bibliographic Details
Published in:Physical review letters 2018-08, Vol.121 (9)
Main Authors: He, Qing Lin, Yin, Gen, Yu, Luyan, Grutter, Alexander J., Pan, Lei, Chen, Chui-Zhen, Che, Xiaoyu, Yu, Guoqiang, Zhang, Bin, Shao, Qiming, Stern, Alexander L., Casas, Brian, Xia, Jing, Han, Xiaodong, Kirby, Brian J., Lake, Roger K., Law, K. T., Wang, Kang L.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
phonons
spin dynamics
spintronics
thermal conductivity
thermoelectric
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Summary:Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the bottom TI surface states through interfacial couplings. During the magnetization reversal, intermediate spin configurations are ascribed from unsynchronized magnetic switchings. This unsynchronized switching develops antisymmetric magnetoresistance spikes during magnetization reversals, which might originate from a series of topological transitions. With the high Néel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists up to ~$90 K$.
ISSN:0031-9007
1079-7114