Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions

GroupqV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides （TMDCs）, and black phosphorus （BP）. In this paper, we report experimental and theoretical investigations of the band structure and transport properties of GeSe and its heteros...

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Bibliographic Details
Published in:Nano research 2018-01, Vol.11 (1), p.420-430
Main Authors: Yap, Wui Chung, Yang, Zhengfeng, Mehboudi, Mehrshad, Yan, Jia-An, Barraza-Lopez, Salvador, Zhu, Wenjuan
Format: Article
Language:English
Subjects:
Alignment
Anisotropy
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Chemistry
Chemistry and Materials Science
CMOS
Condensed Matter Physics
Conductance
Conduction
Conduction bands
Crystal structure
Crystallography
Density functional theory
Doping
Electrodes
Electron transport
Electronic devices
Field effect transistors
Graphene
Heterojunctions
Heterostructures
Layered materials
Materials Science
Mathematical analysis
Metal oxide semiconductors
Molybdenum disulfide
Nanotechnology
Optoelectronic devices
P-n junctions
Phase transitions
Phosphorus
Physics
Research Article
Resistance
Science & Technology - Other Topics
Semiconductor devices
Symmetry
Temperature dependence
Tensors
互补金属氧化物半导体
材料
垂直
异质
各向异性
MoS2
极化方向
温度依赖
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Summary:GroupqV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides （TMDCs）, and black phosphorus （BP）. In this paper, we report experimental and theoretical investigations of the band structure and transport properties of GeSe and its heterostructures. We find that GeSe exhibits a markedly anisotropic electronic transport, with maximum conductance along the armchair direction. Density functional theory calculations reveal that the effective mass is 2.7 times larger along the zigzag direction than the armchair direction; this mass anisotropy explains the observed anisotropic conductance. The crystallographic orientation of GeSe is confirmed by angle- resolved polarized Raman measurements, which are further supported by calculated Raman tensors for the orthorhombic structure. Novel GeSeflVIoS2 p-n heterojunctions are fabricated, combining the natural p-type doping in GeSe and n-type doping in MoS2. The temperature dependence of the measured junction current reveals that GeSe and MoS2 have a type-II band alignment with a conduction band offset of N 0.234 eV. The anisotropic conductance of GeSe may enable the development of new electronic and optoelectronic devices, such as high-efficiency thermoelectric devices and plasmonic devices with resonance frequency continuously tunable through light polarization direction. The unique GeSe/MoS2 p-n junctions with type-II alignment may become essential building blocks of vertical tunneling field-effect transistors for low-power applications. The novel p-type layered material GeSe can also be combined with n-type TMDCs to form heterogeneous complementary metal oxide semiconductor （CMOS） circuits.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-017-1646-8