Interfaces Between CdTe and ALD Al2O3

We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxi...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2018-11, Vol.8 (6), p.1858-1861
Main Authors: Perkins, Craig L., Ablekim, Tursun, Barnes, Teresa M., Kuciauskas, Darius, Lynn, Kelvin G., Nemeth, William, Reese, Matthew O., Swain, Santosh K., Metzger, Wyatt K.
Format: Article
Language:English
Subjects:
Alumina
Aluminum oxide
Atomic layer deposition
Cadmium compounds
CdTe
Crystals
II-VI semiconductor materials
interface
MATERIALS SCIENCE
oxide
Passivation
Photovoltaic systems
SOLAR ENERGY
TRPL
XPS
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Summary:We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al 2 O 3 /CdTe structures with CdCl 2 and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al 2 O 3 . Direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2018.2870139