Nanosecond Melting and Recrystallization in Shock-Compressed Silicon

In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ∼31-33  GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergenc...

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Bibliographic Details
Published in:Physical review letters 2018-09, Vol.121 (13), p.135701-135701, Article 135701
Main Authors: Turneaure, Stefan J, Sharma, Surinder M, Gupta, Y M
Format: Article
Language:English
Subjects:
crystal structures
Diffraction
MATERIALS SCIENCE
mechanical & acoustical properties
Melting
Phase diagrams
pressure effects
Recrystallization
semiconductors
Silicon
single crystal materials
X-ray diffraction
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Summary:In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ∼31-33  GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.121.135701