Compact epsilon-near-zero silicon photonic phase modulators

In this paper, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive si...

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Bibliographic Details
Published in:Optics express 2018-08, Vol.26 (17), p.21594-21605
Main Authors: Reines, Isak C, Wood, Michael G, Luk, Ting S, Serkland, Darwin K, Campione, Salvatore
Format: Article
Language:English
Subjects:
modulators
OTHER INSTRUMENTATION
phase modulation
plasmonics
waveguide modulators
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Summary:In this paper, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In O ) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 μm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.26.021594