Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films

This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposit...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2018-06, Vol.10 (24), p.20740-20747
Main Authors: Mohapatra, Pratyasha, Mendivelso-Perez, Deyny, Bobbitt, Jonathan M, Shaw, Santosh, Yuan, Bin, Tian, Xinchun, Smith, Emily A, Cademartiri, Ludovico
Format: Article
Language:English
Subjects:
carbon free
colloidal nanoparticle
helium plasma
large-scale synthesis
MATERIALS SCIENCE
nanocrystalline Si film
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Summary:This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.8b03771