Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus....

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Bibliographic Details
Published in:Physical review letters 2018-04, Vol.120 (15), p.156403-156403, Article 156403
Main Authors: Pletikosić, I, von Rohr, F, Pervan, P, Das, P K, Vobornik, I, Cava, R J, Valla, T
Format: Article
Language:English
Subjects:
Band structure
Band structure of solids
Banded structure
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dispersion
Electronic devices
Phosphorus
Photonics
Thermoelectricity
Tin selenide
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Summary:The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.120.156403