Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

© 2016 Wiley-VCH Verlag GmbH & Co. KGaA. Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failu...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-02, Vol.28 (14)
Main Authors: Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Grafals, Emmanuelle Merced, Kilcoyne, Arthur L. David, Tyliszczak, Tolek, Weker, Johanna Nelson, Nishi, Yoshio, Williams, R. Stanley
Format: Article
Language:English
Online Access:Get full text
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Summary:© 2016 Wiley-VCH Verlag GmbH & Co. KGaA. Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201505435