Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field‐effect transistor characteristics are ev...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2015-08, Vol.27 (31), p.4640-4648
Main Authors: Keyshar, Kunttal, Gong, Yongji, Ye, Gonglan, Brunetto, Gustavo, Zhou, Wu, Cole, Daniel P., Hackenberg, Ken, He, Yongmin, Machado, Leonardo, Kabbani, Mohamad, Hart, Amelia H. C., Li, Bo, Galvao, Douglas S., George, Antony, Vajtai, Robert, Tiwary, Chandra Sekhar, Ajayan, Pulickel M.
Format: Article
Language:English
Subjects:
2D materials
Chemical vapor deposition
Disulfides
GRAIN-BOUNDARY
GROWTH
HEXAGONAL BORON-NITRIDE
HIGH-PERFORMANCE
HIGH-QUALITY MONOLAYER
HYDROGEN EVOLUTION REACTION
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
MATERIALS SCIENCE
Microscopy
Monolayers
MOS2 ATOMIC LAYERS
Multilayers
N-type semiconductors
NANOSHEETS
renium disulfide
Rhenium
Synthesis
TRANSISTORS
transition metal dichalcogenides
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Summary:The direct synthesis of monolayer and multilayer ReS2 by chemical vapor deposition at a low temperature of 450 °C is reported. Detailed characterization of this material is performed using various spectroscopy and microscopy methods. Furthermore initial field‐effect transistor characteristics are evaluated, which highlight the potential in being used as an n‐type semiconductor.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201501795