Kinetically limited growth of GaAsBi by molecular-beam epitaxy

The growth of GaAsBi alloys is plagued by the appearance of Bi droplets due to excess Bi that accumulates during growth. Here we present an alternate growth regime that kinetically limits the amount of Bi on the surface, eliminating Bi droplets for a wide range of Bi compositions, while yielding ato...

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Bibliographic Details
Published in:Journal of crystal growth 2012, Vol.338 (1), p.107-110
Main Authors: Ptak, A.J., France, R., Beaton, D.A., Alberi, K., Simon, J., Mascarenhas, A., Jiang, C.-S.
Format: Article
Language:English
Subjects:
A1. Atomic-Force Microscopy
A1. Growth Models
A1. Segregation
A3. Molecular-Beam Epitaxy
Alloys
atomic-force microscopy
B1. Bismuth Compounds
B2. Semiconducting III-V Materials
bismuth compounds
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystal growth
Droplets
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Fluxes
growth models
Materials science
Methods of crystal growth
physics of crystal growth
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Resultants
segregation
semiconduction III-IV materials
SOLAR ENERGY
Solubility, segregation, and mixing
phase separation
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:The growth of GaAsBi alloys is plagued by the appearance of Bi droplets due to excess Bi that accumulates during growth. Here we present an alternate growth regime that kinetically limits the amount of Bi on the surface, eliminating Bi droplets for a wide range of Bi compositions, while yielding atomically smooth surfaces. Growth rate plays a major role in the amount of Bi that accumulates on the surface, with high growth rates and low Bi fluxes leading to less surface Bi. A balance can be achieved between low Bi coverage, the resultant rough surfaces, and the excessive Bi coverage that leads to Bi droplets. Bi incorporation in this growth regime is linear with Bi flux and scales inversely with growth rate. Unlike previous studies, there is no sign of saturating Bi incorporation with increasing Bi flux, allowing for intuitive prediction and control of Bi content in this regime. ► GaAsBi growth by molecular-beam epitaxy. ► Bi segregation is kinetically limited at higher growth rates. ► Atomically smooth, droplet-free GaAsBi is demonstrated. ► Smooth growth requires selecting the proper growth rate for a given Bi composition.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.10.040