Electrical and structural properties of ZnO synthesized via infiltration of lithographically defined polymer templates

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (20)
Main Authors: Nam, Chang-Yong, Stein, Aaron, Kisslinger, Kim, Black, Charles T.
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Chemical synthesis
Electron mobility
Electronic devices
Field effect transistors
Infiltration
NANOSCIENCE AND NANOTECHNOLOGY
Nanowires
Oxygen plasma
Polymers
Semiconductor devices
Transmission electron microscopy
Water vapor
Zinc oxide
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Summary:We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ∼1019 cm−3 carrier density, and ∼0.1 cm2 V−1 s−1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4935793