In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors

Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because...

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Bibliographic Details
Published in:Journal of applied physics 2015-07, Vol.118 (3)
Main Authors: Kumar, Suhas, Graves, Catherine E., Strachan, John Paul, Kilcoyne, A. L. David, Tyliszczak, Tolek, Nishi, Yoshio, Williams, R. Stanley
Format: Article
Language:English
Subjects:
Agglomerates
Applied physics
Computer memory
Electronic structure
High voltages
Information storage
Inhomogeneous media
Interstitials
Memristors
Microphysics
Microscopy
Multiplexing
Organic chemistry
Resistance
Spatial resolution
Spectroscopy
Switching
Tantalum oxides
X ray absorption
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Summary:Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance nonvolatile computer memory. The microphysics has been elusive because of the small scale and subtle physical changes that accompany conductance switching. In this study, we probed the atomic composition, local chemistry, and electronic structure of functioning tantalum oxide memristors through spatially mapped O K-edge x-ray absorption. We developed a time-multiplexed spectromicroscopy technique to enhance the weak and possibly localized oxide modifications with spatial and spectral resolutions of
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4926477