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1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R ON,SP (5.12 mQ · cm 2 ), a low turn-ON voltage (1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in...
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Published in: | IEEE electron device letters 2015-04, Vol.36 (4), p.375-377 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R ON,SP (5.12 mQ · cm 2 ), a low turn-ON voltage (1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV 2 /R ON,SP of 727 MW · cm -2 . The record high BV of 1.9 kV is attributed to the dual field-plate structure. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2015.2404309 |