1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R ON,SP (5.12 mQ · cm 2 ), a low turn-ON voltage (1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in...

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Bibliographic Details
Published in:IEEE electron device letters 2015-04, Vol.36 (4), p.375-377
Main Authors: Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Nomoto, Kazuki, Xiaodong Yan, Yu Cao, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, Xing, Huili Grace
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Anodes
Break-down voltage
ENGINEERING
Field plate
Gallium nitride
GaN on Silicon
High voltage device
Schottky barrier diode
Schottky barrier diode, GaN on Silicon, Breakdown voltage, High voltage device, AlGaN/GaN, Field plate
Schottky barriers
Schottky diodes
Silicon
Substrates
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Summary:In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R ON,SP (5.12 mQ · cm 2 ), a low turn-ON voltage (1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV 2 /R ON,SP of 727 MW · cm -2 . The record high BV of 1.9 kV is attributed to the dual field-plate structure.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2404309