Irradiation-induced microstructural change in helium-implanted single crystal and nano-engineered SiC

Microstructural evolution induced by helium implantation and subsequent heavy ion irradiation has been investigated in single crystal and nano-engineered (NE) 3C SiC. Implantation with 65keV He+ ions was performed at 277°C, and the helium depth distribution was determined by elastic recoil detection...

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Bibliographic Details
Published in:Journal of nuclear materials 2014-10, Vol.453 (1-3), p.280-286
Main Authors: Chen, C.H., Zhang, Y., Fu, E., Wang, Y., Crespillo, M.L., Liu, C., Shannon, S., Weber, W.J.
Format: Article
Language:English
Subjects:
Bubbles
Helium
helium bubbles
Implantation
Irradiation
irradiation effects
Microstructure
nano-engineered
Nanostructure
Silicon carbide
Single crystals
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Summary:Microstructural evolution induced by helium implantation and subsequent heavy ion irradiation has been investigated in single crystal and nano-engineered (NE) 3C SiC. Implantation with 65keV He+ ions was performed at 277°C, and the helium depth distribution was determined by elastic recoil detection analysis (ERDA). Transmission electron microscopy (TEM) could not resolve the presence of bubbles in any of the helium-implanted single crystal SiC. However, helium platelets and small dislocation loops (∼50nm in diameter) were observed in the single crystal sample with the highest implantation fluence after 1h annealing at 700°C. Following irradiation with 9MeV Au3+ ions at 700°C, no bubbles were observed in the helium-implanted single crystal SiC, regardless of helium fluence. For the helium-implanted NE SiC, subsequent irradiation with 9MeV Au ions to a dose of 10dpa at 700°C resulted in the formation and growth of bubbles, and a bimodal helium bubble size distribution was observed at the highest helium concentration (8000appm) in the NE SiC.
ISSN:0022-3115
1873-4820
DOI:10.1016/j.jnucmat.2014.07.020