Test simulation of neutron damage to electronic components using accelerator facilities

The purpose of this work is to demonstrate equivalent bipolar transistor damage response to neutrons and silicon ions. We report on irradiation tests performed at the White Sands Missile Range Fast Burst Reactor, the Sandia National Laboratories (SNL) Annular Core Research Reactor, the SNL SPHINX ac...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2015-12, Vol.365, p.294-299
Main Authors: King, D.B., Fleming, R.M., Bielejec, E.S., McDonald, J.K., Vizkelethy, G.
Format: Article
Language:English
Subjects:
Accelerators
Bipolar transistors
Damage
Displacement damage
Heterojunction bipolar transistors
Ion beam damage
Laboratories
Neutron damage
Nuclear reactor components
Radiation effects
Sands
Semiconductor devices
Silicon
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Summary:The purpose of this work is to demonstrate equivalent bipolar transistor damage response to neutrons and silicon ions. We report on irradiation tests performed at the White Sands Missile Range Fast Burst Reactor, the Sandia National Laboratories (SNL) Annular Core Research Reactor, the SNL SPHINX accelerator, and the SNL Ion Beam Laboratory using commercial silicon npn bipolar junction transistors (BJTs) and III–V Npn heterojunction bipolar transistors (HBTs). Late time and early time gain metrics as well as defect spectra measurements are reported.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2015.08.026