One-Volt Operation of High-Current Vertical Channel Polymer Semiconductor Field-Effect Transistors

We realize a vertical channel polymer semiconductor field effect transistor architecture by confining the organic material within gratings of interdigitated trenches. The geometric space savings of a perpendicular channel orientation results in devices sourcing areal current densities in excess of 4...

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Bibliographic Details
Published in:Nano letters 2012-08, Vol.12 (8), p.4181-4186
Main Authors: Johnston, Danvers E, Yager, Kevin G, Nam, Chang-Yong, Ocko, Benjamin M, Black, Charles T
Format: Article
Language:English
Subjects:
75
Applied sciences
Channels
Confining
Current density
Devices
Electric Conductivity
Electrochemical Techniques
electronic mobility
Electronics
Exact sciences and technology
Field effect transistors
field-effect transistor
Materials
Organice microstructures
Polymers - chemistry
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Transistors
Transistors, Electronic
Trenches
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Summary:We realize a vertical channel polymer semiconductor field effect transistor architecture by confining the organic material within gratings of interdigitated trenches. The geometric space savings of a perpendicular channel orientation results in devices sourcing areal current densities in excess of 40 mA/cm2, using a one-volt supply voltage, and maintaining near-ideal device operating characteristics. Vertical channel transistors have a similar electronic mobility to that of planar devices using the same polymer semiconductor, consistent with a molecular reorientation within confining trenches we understand through X-ray scattering measurements.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl301759j