SEU hardened memory cells for a CCSDS Reed-Solomon encoder

A design technique to harden CMOS memory circuits against single event upset (SEU) in the space environment is reported. The design technique provides a recovery mechanism which is independent of the shape of the upsetting event. A RAM cell and flip-flop design are presented to demonstrate the metho...

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Bibliographic Details

Published in:	IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1471-1477
Main Authors:	Whitaker, S., Canaris, J., Liu, K.
Format:	Article
Language:	eng
Subjects:	426000 > Engineering-- Components, Electron Devices & Circuits-- (1990-) Applied sciences Circuits CMOS process Coding, codes CONTROL DESIGN Design engineering ELECTRONIC CIRCUITS Electronics And Electrical Engineering ENGINEERING Exact sciences and technology FLIP-FLOP CIRCUITS HARDENING Information, signal and communications theory INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY MEMORY DEVICES MOS TRANSISTORS MULTIVIBRATORS NASA PHYSICAL RADIATION EFFECTS PULSE CIRCUITS RADIATION EFFECTS RADIATION HARDENING Random access memory Read-write memory Reed-Solomon codes SEMICONDUCTOR DEVICES Signal and communications theory Single event upset SPACE FLIGHT Space stations Telecommunications and information theory TRANSISTORS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems VARIATIONS Very large scale integration
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