Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias str...

Full description

Saved in:
Bibliographic Details
Published in:ETRI journal 2009-02, Vol.31 (1), p.62-64
Main Authors: Shin, Jae-Heon, Lee, Ji-Su, Hwang, Chi-Sun, KoPark, Sang-Hee, Cheong, Woo-Seok, Ryu, Min-Ki, Byun, Chun-Won, Lee, Jeong-Ik, Chu, Hye-Yong
Format: Article
Language:Korean
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.
ISSN:1225-6463
2233-7326