Molecular Beam Epitaxy of Co2MnSi Films on Group-IV Semiconductors

We explore epitaxial growth of Co 2 MnSi films on Si(111) or Ge(111) by means of low-temperature molecular beam epitaxy. We find that as-grown Co 2 MnSi films consist of mixed phases with L2 1 -ordered structures and microcrystalline ones. As a result, the magnetic moment, which is nearly half of th...

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Bibliographic Details
Published in:Jpn J Appl Phys 2013-04, Vol.52 (4), p.04CM06-04CM06-4
Main Authors: Kawano, Makoto, Yamada, Shinya, Oki, Soichiro, Tanikawa, Kohei, Miyao, Masanobu, Hamaya, Kohei
Format: Article
Language:English
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Summary:We explore epitaxial growth of Co 2 MnSi films on Si(111) or Ge(111) by means of low-temperature molecular beam epitaxy. We find that as-grown Co 2 MnSi films consist of mixed phases with L2 1 -ordered structures and microcrystalline ones. As a result, the magnetic moment, which is nearly half of the ideal value, can be obtained even at very low growth temperature. Post-growth annealing was effective to crystallize the microcrystalline phases observed in the as-grown layer, leading to a further enhancement in the magnetic moment. We discuss a difference in growth mechanism between Co 2 MnSi and other Heusler alloys examined in our previous works.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.04CM06