Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation

In this study, the applicability of in situ surface modification by radical beam irradiation method to reduce threading dislocation density in InN was investigated. The dislocation behavior, crystallographic quality, electrical properties, and photoluminescence properties of InN grown with this meth...

Full description

Saved in:

Bibliographic Details
Published in:	Japanese Journal of Applied Physics 2018-03, Vol.57 (3), p.35502
Main Authors:	Abas, Faizulsalihin Bin, Fujita, Ryoichi, Mouri, Shinichiro, Araki, Tsutomu, Nanishi, Yasushi
Format:	Article
Language:	eng
Subjects:	Crystallography Dislocation density Electrical properties Irradiation Photoluminescence Threading dislocations Transmission electron microscopy
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	In this study, the applicability of in situ surface modification by radical beam irradiation method to reduce threading dislocation density in InN was investigated. The dislocation behavior, crystallographic quality, electrical properties, and photoluminescence properties of InN grown with this method were studied. Transmission electron microscopy observation revealed that dislocation density in the InN layer reduced by a factor of 3 in certain regions and showed good agreement with the results from photoluminescence spectroscopy. If this technology is established, high-quality InN with low threading dislocation density can be achieved with a very simple and repeatable growth process.
ISSN:	0021-4922 1347-4065