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Photoinduced top-gate effect in amorphous InGaZnO4 thin-film transistors
In this paper, we will discuss the top-gate effect under illumination in amorphous InGaZnO4 thin-film transistors (a-InGaZnO TFTs) having a transparent top-gate electrode. The dependence of bottom-gate transfer characteristics on top-gate voltage (Vtg) shows a specific behavior under 425 nm light il...
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Published in: | Japanese Journal of Applied Physics 2016-04, Vol.55 (4) |
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Main Authors: | , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | In this paper, we will discuss the top-gate effect under illumination in amorphous InGaZnO4 thin-film transistors (a-InGaZnO TFTs) having a transparent top-gate electrode. The dependence of bottom-gate transfer characteristics on top-gate voltage (Vtg) shows a specific behavior under 425 nm light illumination, which we call the "photoinduced top-gate effect . The subthreshold current under 425 nm light illumination, whose photon energy is smaller than the optical bandgap of a-InGaZnO, increases with increasing magnitude of negative Vtg. Measurements at various temperatures support the idea that the photoinduced top-gate effect arises from a tunneling mechanism due to a negative Vtg. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.55.040307 |