Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film

An organic ferroelectric gate field-effect transistor (FET) memory has been fabricated using an organic semiconductor of rubrene thin film with a high mobility and a gate insulating layer of poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TeFE)] thin film. A rubrene thin-film sheet was grown by...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2014-04, Vol.53 (4S), p.4-1-04ED11-5
Main Authors: Kanashima, Takeshi, Katsura, Yuu, Okuyama, Masanori
Format: Article
Language:English
Subjects:
Drains
Ferroelectric materials
Ferroelectricity
Field effect transistors
Gates
Pentacene
Semiconductor devices
Thin films
Voltage
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Summary:An organic ferroelectric gate field-effect transistor (FET) memory has been fabricated using an organic semiconductor of rubrene thin film with a high mobility and a gate insulating layer of poly(vinylidene fluoride-tetrafluoroethylene) [P(VDF-TeFE)] thin film. A rubrene thin-film sheet was grown by physical vapor transport (PVT), and placed onto a spin-coated P(VDF-TeFE) thin-film layer, and Au source and drain electrodes were formed on this rubrene thin film. A hysteresis loop of the drain current-gate voltage (ID-VG) characteristic has been clearly observed in the ferroelectric gate FET, and is caused by the ferroelectricity. The maximum drain current is 1.5 × 10−6 A, which is about two orders of magnitude larger than that of the P(VDF-TeFE) gate FET using a pentacene thin film. Moreover, the mobility of this organic ferroelectric gate FET using rubrene thin film is 0.71 cm2 V−1 s−1, which is 35 times larger than that of the FET with pentacene thin film.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.04ED11