Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3

We evaluated the DC characteristics of InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using atomic-layer-deposited (ALD-)Al2O3 by focusing on air annealing to control defect levels in Al2O3 and electronic states at the Al2O3/InAlN interface. We clarified that the...

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Bibliographic Details
Published in:Applied physics express 2017-06, Vol.10 (6)
Main Authors: Ozaki, Shiro, Makiyama, Kozo, Ohki, Toshihiro, Okamoto, Naoya, Kaneki, Shota, Nishiguchi, Kenya, Hara, Naoki, Hashizume, Tamotsu
Format: Article
Language:English
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Summary:We evaluated the DC characteristics of InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using atomic-layer-deposited (ALD-)Al2O3 by focusing on air annealing to control defect levels in Al2O3 and electronic states at the Al2O3/InAlN interface. We clarified that the transconductance linearity and subthreshold slope were improved by air annealing, indicating a reduction in the number of electronic states at the Al2O3/InAlN interface. Furthermore, the cathodoluminescence study demonstrated that the oxygen-related defects in ALD-Al2O3 were decreased by air annealing. Consequently, we could successfully reduce the threshold voltage shift of InAlN/GaN MOS-HEMTs by using air-annealed ALD-Al2O3.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.10.061001